Luminescence in Slipped and Dislocation-Free Laser-Annealed Silicon

Photoluminescence of cw laser-annealed silicon shows a dramatic difference in electronic behavior of the reconstructed material depending upon either creation or suppression of dislocations. Beyond a critical exposure time slip appears, and the luminescence of these samples is dominated by dislocation-related defect levels

Nonexponetial relaxation of photoinduced conductance in organic field effect transistor

We report detailed studies of the slow relaxation of the photoinduced excess charge carriers in organic metal-insulator-semiconductor field effect transistors consisting of poly(3-hexylthiophene) as the active layer. The relaxation process cannot be physically explained by processes, which lead to a simple or a stretched-exponential decay behavior. Models based on serial relaxation dynamics due to a hierarchy of systems with increasing spatial separation of the photo-generated negative and positive charges are used to explain the results. In order to explain the observed trend, the model is further modified by introducing a gate voltage dependent coulombic distribution manifested by the trapped negative charge carriers.Comment: 17 pages, 3 Figure

Probing the potential landscape inside a two-dimensional electron-gas

We report direct observations of the scattering potentials in a two-dimensional electron-gas using electron-beam diffaction-experiments. The diffracting objects are local density-fluctuations caused by the spatial and charge-state distribution of the donors in the GaAs-(Al,Ga)As heterostructures. The scatterers can be manipulated externally by sample illumination, or by cooling the sample down under depleted conditions.Comment: 4 pages, 4 figure

Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes

A synchrotron x-ray topography analysis of the impact of the distribution of defects/dislocations on the electrical performance of GaAs power varactor diodes was carried out. Diodes fabricated on or near Liquid Encapsulated Czochralski cellular dislocation networks in the substrate, which are also known to be rich in As precipitates near these cell walls, were observed to have reduced breakdown voltages (VBR). This is consistent with the possibility that the presence of space-charge cylinders surrounding these dislocations gives rise to reduced VBR if they thread a p-n junction; it is also in accord with the possibility that the As precipitates themselves can act as sites for local field enhancement, thus promoting premature avalanche breakdown

Soluble receptor for advanced glycation end products in COPD: relationship with emphysema and chronic cor pulmonale: a case-control study

<p>Abstract</p> <p>Background</p> <p>The receptor for advanced glycation end products (RAGE) is a multiligand signal transduction receptor that can initiate and perpetuate inflammation. Its soluble isoform (sRAGE) acts as a decoy receptor for RAGE ligands, and is thought to afford protection against inflammation. With the present study, we aimed at determining whether circulating sRAGE is correlated with emphysema and chronic cor pulmonale in chronic obstructive pulmonary disease (COPD).</p> <p>Methods</p> <p>In 200 COPD patients and 201 age- and sex-matched controls, we measured lung function by spirometry, and sRAGE by ELISA method. We also measured the plasma levels of two RAGE ligands, N-epsilon-carboxymethyl lysine and S100A12, by ELISA method. In the COPD patients, we assessed the prevalence and severity of emphysema by computed tomography (CT), and the prevalence of chronic cor pulmonale by echocardiography. Multiple quantile regression was used to assess the effects of emphysema, chronic cor pulmonale, smoking history, and comorbid conditions on the three quartiles of sRAGE.</p> <p>Results</p> <p>sRAGE was significantly lower (p = 0.007) in COPD patients (median 652 pg/mL, interquartile range 484 to 1076 pg/mL) than in controls (median 869 pg/mL, interquartile range 601 to 1240 pg/mL), and was correlated with the severity of emphysema (p < 0.001), the lower the level of sRAGE the greater the degree of emphysema on CT. The relationship remained statistically significant after adjusting for smoking history and comorbid conditions. In addition, sRAGE was significantly lower in COPD patients with chronic cor pulmonale than in those without (p = 0.002). Such difference remained statistically significant after adjusting for smoking history, comorbidities, and emphysema severity. There was no significant difference in the plasma levels of the two RAGE ligands between cases and controls.</p> <p>Conclusions</p> <p>sRAGE is significantly lower in patients with COPD than in age- and sex-matched individuals without airflow obstruction. Emphysema and chronic cor pulmonale are independent predictors of reduced sRAGE in COPD.</p

Enhanced optoelectronic quality of perovskite thin films with hypophosphorous acid for planar heterojunction solar cells

Solution-processed metal halide perovskite semiconductors, such as CH3NH3PbI3, have exhibited remarkable performance in solar cells, despite having non-negligible density of defect states. A likely candidate is halide vacancies within the perovskite crystals, or the presence of metallic lead, both generated due to the imbalanced I/Pb stoichiometry which could evolve during crystallization. Herein, we show that the addition of hypophosphorous acid (HPA) in the precursor solution can significantly improve the film quality, both electronically and topologically, and enhance the photoluminescence intensity, which leads to more efficient and reproducible photovoltaic devices. We demonstrate that the HPA can reduce the oxidized I2 back into I�, and our results indicate that this facilitates an improved stoichiometry in the perovskite crystal and a reduced density of metallic lead

Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures

Combination of mismatched materials in semiconductor nanowire heterostructures offers a freedom of bandstructure engineering that is impossible in standard planar epitaxy. Nevertheless, the presence of strain and structural defects directly control the optoelectronic properties of these nanomaterials. Understanding with atomic accuracy how mismatched heterostructures release or accommodate strain, therefore, is highly desirable. By using atomic resolution high angle annular dark field scanning transmission electron microscopy combined with geometrical phase analyses and computer simulations, we are able to establish the relaxation mechanisms (including both elastic and plastic deformations) to release the mismatch strain in axial nanowire heterostructures. Formation of misfit dislocations, diffusion of atomic species, polarity transfer, and induced structural transformations are studied with atomic resolution at the intermediate ternary interfaces. Two nanowire heterostructure systems with promising applications (InAs/InSb and GaAs/GaSb) have been selected as key examples